/**
  ******************************************************************************
  * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS"
  * AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE
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Version history:
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2021-8-3	V1.0.0	AE TEAM

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Demo introduction:
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本示例功能：使用外部NAND FLASH 烧录文件，将dhrystone测试程序下载到NAND FLASH，复位后加载到SRAM中运行，测试在外部SRAM下的性能。

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测试环境:
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测试用板；
ES-PDS-ES32F369x-V2.1
ES-PDS-ES32SRAM_VGA3

辅助工具：


辅助软件：


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测试步骤：
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1) 将05_ebi_nand_flm\MDK-ARM文件夹下的烧录文件ES32F36xx_ExtMemW29N01HV.FLM复制到IDE对应的文件夹下；
2) 编译工程，编译通过后将程序下载到目标芯片；
3) 复位芯片，进入在线调试；
4) 将变量Microseconds、Dhrystones_Per_Second、dmhz添加到watch窗口；
5) 观察步骤4中的三个变量的最终值
6) 修改“C/C++”选项卡中预处理器宏定义（“TEST_PLL_96M”，“TEST_PLL_72M”，“TEST_PLL_48M”，“TEST_PLL_24M”）
7) 重复步骤(2) ~ (6)进行不同主频下的性能测试

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注意：
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1) 

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System clock:
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External HOSC[12MHz] divided by 3, then PLL to 96MHz.

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Pin connection: 
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